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Design and Modeling of Inductors, Capacitors and Coplanar Waveguides at Tens of GHz Frequencies

Part of the SpringerBriefs in Electrical and Computer Engineering Book Series

DOI: 10.1007/978-3-319-10187-3

ISBN: 978-3-319-10186-6

Publisher: Springer International Publishing - Springer Journals

Aug 29, 2014

1 - 6 of 6 Chapters

Available

RF MEMS Process of Fraunhofer ISiT

Pour Aryan, Naser

Pages: 1 –5

[In technologies used for high frequencies, high resistivity silicon is usually employed as the substrate material. Its high resistivity reduces the microwave losses. In order to prevent DC-currents and bias-dependent leakage from flowing into the substrate, the silicon surface is typically...
Available

Designing Inductors

Pour Aryan, Naser

Pages: 7 –18

[Spiral inductors are commonly used in radio-frequency integrated circuits (RFICs) to act as series or shunt elements in the matching, tank or choke circuits. The quality factor (Q) is among the most important parameters in order to evaluate an inductor’s performance. Unfortunately, quality...
Available

Modeling the Coplanar Line

Pour Aryan, Naser

Pages: 19 –34

[A coplanar line (waveguide) is composed of a signal track with two return conductors on its two sides. All three are in the same plane.]
Available

DC-Block Modeling

Pour Aryan, Naser

Pages: 35 –49

[DC-block (which is an MIM capacitor) is another component that is used in the circuits. Here in the following, a DC-block is modeled which may have different combinations of dielectric layers (a single AlN layer, a single SiN layer, or a combination of both, refer to Chap. 1 for explanation of...
Available

Design-Kit Programming

Pour Aryan, Naser

Pages: 51 –58

[In the last chapters different passive elements were modeled or optimized. The best way to use these models and structures is to put them inside a design-kit in ADS. This helps the designers to work fast and efficiently with them.]
Available

Summary

Pour Aryan, Naser

Pages: 59 –59

[In this essay first it was explained that how a technology introduced by Fraunhofer institute suppresses the losses caused by the inversion channels under the oxide layer of the ISiT substrate. It was shown that this makes it possible to predict the losses of passive elements in this technology...

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