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Nonvolatile magnetoresistive memory in phase separated La 0.325 Pr 0.300 Ca 0.375 MnO 3

Nonvolatile magnetoresistive memory in phase separated La 0.325 Pr 0.300 Ca 0.375 MnO 3 We have measured magnetic and transport response on the polycrystalline La 5 / 8 - y Pr y Ca 3 / 8 MnO 3 ( y = 0.30 , average grain size 2 microns) compound. In the temperature range where ferromagnetic metallic and insulating regions coexist, we observed a persistent memory of low magnetic fields ( < 1 T ) that is determined by the actual amount of the ferromagnetic phase. The possibility to manipulate this fraction with relatively small external perturbations is related to the phase-separated nature of these manganese-oxide-based compounds. The colossal magnetoresistance figures obtained (about 80%) are determined by the fraction enlargement mechanism. Self-shielding of the memory to external fields is found under certain described circumstances. We show that this nonvolatile memory has multilevel capability associated with different applied low magnetic-field values. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Physical Review B American Physical Society (APS)

Nonvolatile magnetoresistive memory in phase separated La 0.325 Pr 0.300 Ca 0.375 MnO 3

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References (6)

Publisher
American Physical Society (APS)
Copyright
Copyright © 2002 The American Physical Society
ISSN
1095-3795
DOI
10.1103/PhysRevB.65.140401
Publisher site
See Article on Publisher Site

Abstract

We have measured magnetic and transport response on the polycrystalline La 5 / 8 - y Pr y Ca 3 / 8 MnO 3 ( y = 0.30 , average grain size 2 microns) compound. In the temperature range where ferromagnetic metallic and insulating regions coexist, we observed a persistent memory of low magnetic fields ( < 1 T ) that is determined by the actual amount of the ferromagnetic phase. The possibility to manipulate this fraction with relatively small external perturbations is related to the phase-separated nature of these manganese-oxide-based compounds. The colossal magnetoresistance figures obtained (about 80%) are determined by the fraction enlargement mechanism. Self-shielding of the memory to external fields is found under certain described circumstances. We show that this nonvolatile memory has multilevel capability associated with different applied low magnetic-field values.

Journal

Physical Review BAmerican Physical Society (APS)

Published: Apr 1, 2002

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