Get 20M+ Full-Text Papers For Less Than $1.50/day. Start a 14-Day Trial for You or Your Team.

Learn More →

Macroscopic Thin Film Deposition Model for the Two-Reactive-Gas Sputtering Process

Macroscopic Thin Film Deposition Model for the Two-Reactive-Gas Sputtering Process AbstractThe presence of a second reactive gas in the magnetron sputtering chamber makes the process much more complicated, and the process control much more difficult than in the case of a single reactive gas. Macroscopic models have been developed in order to explain the complex phenomena and to provide support for the process control. These models are able to explain the nonlinearities of the process and the strong coupling between the control channels.This paper introduces a model created with the intention to of gaining a good grasp of the process, especially regarding the conditions necessary to obtain the required stoichiometry of the film deposited on the substrate. For this purpose, we modelled the formation of the desired ternary compound both directly from the available particle fluxes and from intermediary compounds. The surface of the substrate is divided into eight dynamically variable regions, covered by different compounds, each exposed to the streams of five types of particles.We present the analytical model and provide simulation results in order to demonstrate its capability toof describeing the nonlinear phenomena, which that characterisze the two-gas sputtering process. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Acta Universitatis Sapientiae Electrical and Mechanical Engineering de Gruyter

Macroscopic Thin Film Deposition Model for the Two-Reactive-Gas Sputtering Process

Download PDF
17 pages

Loading next page...
 
/lp/de-gruyter/macroscopic-thin-film-deposition-model-for-the-two-reactive-gas-OfCG5OE0dv
Publisher
de Gruyter
Copyright
© 2016 András Kelemen et al., published by De Gruyter Open
ISSN
2066-8910
eISSN
2066-8910
DOI
10.1515/auseme-2017-0005
Publisher site
See Article on Publisher Site

Abstract

AbstractThe presence of a second reactive gas in the magnetron sputtering chamber makes the process much more complicated, and the process control much more difficult than in the case of a single reactive gas. Macroscopic models have been developed in order to explain the complex phenomena and to provide support for the process control. These models are able to explain the nonlinearities of the process and the strong coupling between the control channels.This paper introduces a model created with the intention to of gaining a good grasp of the process, especially regarding the conditions necessary to obtain the required stoichiometry of the film deposited on the substrate. For this purpose, we modelled the formation of the desired ternary compound both directly from the available particle fluxes and from intermediary compounds. The surface of the substrate is divided into eight dynamically variable regions, covered by different compounds, each exposed to the streams of five types of particles.We present the analytical model and provide simulation results in order to demonstrate its capability toof describeing the nonlinear phenomena, which that characterisze the two-gas sputtering process.

Journal

Acta Universitatis Sapientiae Electrical and Mechanical Engineering – de Gruyter

Published: Dec 1, 2016

References

  • Target compound layer formation during reactive sputtering Jul Aug pp
    Jonsson
  • Reactive sputtering using two reactive gases experiments and computer modeling Jul Aug pp
    Carlsson
  • and Mechanisms of target poisoning during magnetron sputtering as investigated by real - timein situanalysis and collisional computer simulation of Report
    Güttler
  • Experiments and modeling of dual reactive magnetron sputtering using two reactive gases Jul Aug pp
    Kubart
  • Making magnetron sputtering work Modelling reactive sputtering dynamics Part SVC
    Christie
  • modeling as a tool to predict deposition rate and film composition in the reactive sputtering process
    Berg
  • Effective closed - loop control for reactive sputtering using two reactive gases th Annual Technical Conference Proceedings of
    Carter
  • Modeling of Mass Transport and Gas Kinetics of the Reactive Sputtering Process de supplément au de Volume juin
    Berg
  • controlului automat al pulverizării catodice în procesul de obţinere a straturilor subţiri de doctorat Transilvania din
    Papp
  • privind dezvoltarea unor electrotehnologii pentru depunerea straturilor metalice subţiri de doctorat din
    Görgy
  • Control of the reactive sputtering process using two reactive gases th Annual Technical Conference Proceedings of
    Sproul
  • and Modelling of magnetron sputtering of Tungsten Oxide with reactive gas pulsing Plasma Processes and VCH Verlag GmbH Co Weinheim pp
    Kubart
  • Katardijev Preferential sputtering effects in thin film processing Jul Aug pp
    Berg