Get 20M+ Full-Text Papers For Less Than $1.50/day. Start a 14-Day Trial for You or Your Team.

Learn More →

Analysing I ON /I OFF in ultradeep–submicron CMOS devices using grooved nMOSFETs for low–power applications

Analysing I ON /I OFF in ultradeep–submicron CMOS devices using grooved nMOSFETs for low–power... To manage the increasing static leakage in ultra low–power applications, solutions for leakage reduction as well as improving the current drive of the device are sought at the device design and process technology levels. The influence of single corner grooves and changing concave corner angles in deep submicron and ultra deep–submicron grooved gate nMOSFET is studied to analyse the subthreshold characteristics in ultralow–power applications. ATLAS process simulator verifies that by changing the structural parameters, ON current–OFF current ratio is improved and maintained constant and be helpful for low–power applications as well as be applicable to high–speed devices. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png International Journal of Signal and Imaging Systems Engineering Inderscience Publishers

Analysing I ON /I OFF in ultradeep–submicron CMOS devices using grooved nMOSFETs for low–power applications

Loading next page...
 
/lp/inderscience-publishers/analysing-i-on-i-off-in-ultradeep-submicron-cmos-devices-using-grooved-6c8O0VIGmK

References

References for this paper are not available at this time. We will be adding them shortly, thank you for your patience.

Publisher
Inderscience Publishers
Copyright
Copyright © Inderscience Enterprises Ltd. All rights reserved
ISSN
1748-0698
eISSN
1748-0701
DOI
10.1504/IJSISE.2013.051503
Publisher site
See Article on Publisher Site

Abstract

To manage the increasing static leakage in ultra low–power applications, solutions for leakage reduction as well as improving the current drive of the device are sought at the device design and process technology levels. The influence of single corner grooves and changing concave corner angles in deep submicron and ultra deep–submicron grooved gate nMOSFET is studied to analyse the subthreshold characteristics in ultralow–power applications. ATLAS process simulator verifies that by changing the structural parameters, ON current–OFF current ratio is improved and maintained constant and be helpful for low–power applications as well as be applicable to high–speed devices.

Journal

International Journal of Signal and Imaging Systems EngineeringInderscience Publishers

Published: Jan 1, 2013

There are no references for this article.