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- Publisher
- Inderscience Publishers
- Copyright
- Copyright © Inderscience Enterprises Ltd. All rights reserved
- ISSN
- 1748-0698
- eISSN
- 1748-0701
- DOI
- 10.1504/IJSISE.2009.033727
- Publisher site
- See Article on Publisher Site
Abstract
A Genetic Algorithm (GA) was adopted to extract realistic values of the transport properties of both electrons and holes in semiconductor materials. A theoretical waveform model was fitted to the real digitised signal waveform taking into account the realistic transport parameters. This method is simple and useful for pulse shape analysis; the result demonstrates promise for the successful application of GAs for the estimation of detector parameters in semiconductor detectors.
Journal
International Journal of Signal and Imaging Systems Engineering – Inderscience Publishers
Published: Jan 1, 2009