Abstract

<h2>Acta Crystallographica Section A</h2><h3>Crystal Physics, Diffraction, Theoretical and General Crystallography</h3><h3>0567-7394</h3> <h2>book reviews</h2> Volume 38 Part 3 Pages 399-400 May 1982 <h2> Photoelastic and electrooptic properties of crystals by T. S. Narasimhamurty</h2> E. H. Turner Acta Cryst. (1982). A38, 399 focuses on computer simulation techniques for ion bombard- ment of single crystalline materials. Channeling of ions and focused collision sequences in low-index crystal directions are discussed. These two theoretical contributions are supplemented by two chapters on sputtering yield measurements of poly- crystalline materials (H. H. Andersen & H. L. Bay) and on single-crystalline targets (H. E. Roosendaal). The sputtering yield, which is defined as the number of ejected target atoms per impinging particle, is of central importance in sputtering and its applications. Different methods to measure the yield are discussed and an extremely large amount of experimentally determined yield data has been collected from the literature. This chapter alone has over 400 references. These measured sputtering-yield data for over 40 elements are presented graphically as a function of bombarding ion energy for different noble gas ions and compared with calculated values according to the linear cascade theory as discussed in the first contribution. These data and those concerning the