Temperature dependence of X-ray reflection intensity from an absorbing perfect crystal near an absorption edge
Acta Crystallographica Section A: Crystal Physics, Diffraction, Theoretical and General Crystallography
, Volume 35 (5): 831 – Sep 1, 1979
Abstract
The temperature effect of X-ray integrated reflection intensities is discussed theoretically in the energy region near the absorption edge of Ga in GaAs perfect crystal. From the calculation based on the dynamical theory of diffraction, it is concluded that the integrated intensity of in the Bragg case shows a complicated temperature effect depending on the change of the anomalous scattering factor across the absorption edge. Calculated results are compared with a preliminary measurement which shows a qualitative agreement with the theory.
