X-ray intensity measurements on large crystals by energy-dispersive diffractometry. IV. Determination of anomalous scattering factors near the absorption edges of GaAs by the one-intensity-ratio method
Acta Crystallographica Section A: Crystal Physics, Diffraction, Theoretical and General Crystallography
, Volume 35 (5): 828 – Sep 1, 1979
Abstract
The imaginary part f" () of each scattering factor for Ga and As has been measured through the absorption energy regions near the K absorption edges of both Ga and As atoms. The intensity ratio r555 between 555 Friedel-pair reflexions has been measured in the same energy regions. From these data, the real part f'() has been determined in the same way as has already been published Fukamachi & Hosoya (1975). Acta Cryst. A31, 215-220. The f'() values above the edges thus obtained show fairly good agreement in fine structure with those calculated from f" () values with the dispersion relation, but some discrepancies are found in the regions below the edges.
