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A Second-Order ΣΔ ADC Using Sputtered IGZO TFTsOxide TFTs @ FCT-UNL

A Second-Order ΣΔ ADC Using Sputtered IGZO TFTs: Oxide TFTs @ FCT-UNL [Oxide thin-film transistors (TFTs) optimization is imperative in order to obtain a successful integration of circuits. In fact, parameters as turn-on voltage (Von) or gate leakage current (IG) are known to influence circuit characteristics. These parameters are greatly affected by the properties of the dielectric layer and its interface with the semiconductor. Therefore, amorphous high-κ dielectrics acquire an important role, especially in multicomponent single or multilayer structures, where materials with different electrical properties (e.g., high-κ and high bandgap energy, EG) are combined to acquire dielectrics with the best possible performance and reliability.] http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png

A Second-Order ΣΔ ADC Using Sputtered IGZO TFTsOxide TFTs @ FCT-UNL

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Publisher
Springer International Publishing
Copyright
© The Author(s) 2016
ISBN
978-3-319-27190-3
Pages
17 –47
DOI
10.1007/978-3-319-27192-7_3
Publisher site
See Chapter on Publisher Site

Abstract

[Oxide thin-film transistors (TFTs) optimization is imperative in order to obtain a successful integration of circuits. In fact, parameters as turn-on voltage (Von) or gate leakage current (IG) are known to influence circuit characteristics. These parameters are greatly affected by the properties of the dielectric layer and its interface with the semiconductor. Therefore, amorphous high-κ dielectrics acquire an important role, especially in multicomponent single or multilayer structures, where materials with different electrical properties (e.g., high-κ and high bandgap energy, EG) are combined to acquire dielectrics with the best possible performance and reliability.]

Published: Dec 30, 2015

Keywords: Atomic Force Microscopy; Multilayer Structure; Rutherford Backscattering Spectroscopy; Substrate Bias; Spectroscopic Ellipsometry

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