Design and Modeling of Inductors, Capacitors and Coplanar Waveguides at Tens of GHz FrequenciesDC-Block Modeling
Design and Modeling of Inductors, Capacitors and Coplanar Waveguides at Tens of GHz Frequencies:...
Pour Aryan, Naser
2014-08-29 00:00:00
[DC-block (which is an MIM capacitor) is another component that is used in the circuits. Here in the following, a DC-block is modeled which may have different combinations of dielectric layers (a single AlN layer, a single SiN layer, or a combination of both, refer to Chap. 1 for explanation of the layers), and different geometrical dimensions (overlap length, center metal width, ground metal width, ...). In the literature there are numerous articles that simply extract the model elements (like ideal capacitor, resistor, inductor, ... which build the equivalent circuit of the MIM-capacitor) from the measured S-parameters of the built capacitors. However none of these approaches calculates the model elements directly from the MIM capacitor’s geometrical characteristics. So what is done here is quite a new approach.]
http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.pnghttp://www.deepdyve.com/lp/springer-journals/design-and-modeling-of-inductors-capacitors-and-coplanar-waveguides-at-Gb8tqyInLn
Design and Modeling of Inductors, Capacitors and Coplanar Waveguides at Tens of GHz FrequenciesDC-Block Modeling
[DC-block (which is an MIM capacitor) is another component that is used in the circuits. Here in the following, a DC-block is modeled which may have different combinations of dielectric layers (a single AlN layer, a single SiN layer, or a combination of both, refer to Chap. 1 for explanation of the layers), and different geometrical dimensions (overlap length, center metal width, ground metal width, ...). In the literature there are numerous articles that simply extract the model elements (like ideal capacitor, resistor, inductor, ... which build the equivalent circuit of the MIM-capacitor) from the measured S-parameters of the built capacitors. However none of these approaches calculates the model elements directly from the MIM capacitor’s geometrical characteristics. So what is done here is quite a new approach.]
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