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Design and Modeling of Inductors, Capacitors and Coplanar Waveguides at Tens of GHz FrequenciesRF MEMS Process of Fraunhofer ISiT

Design and Modeling of Inductors, Capacitors and Coplanar Waveguides at Tens of GHz Frequencies:... [In technologies used for high frequencies, high resistivity silicon is usually employed as the substrate material. Its high resistivity reduces the microwave losses. In order to prevent DC-currents and bias-dependent leakage from flowing into the substrate, the silicon surface is typically covered with 500 to 2,000 nm thick layer of oxide. The substrate in the ISiT technology is composed of a 508 μ\documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$\upmu $$\end{document}m thick high-resistivity silicon layer with a resistivity larger than 3,000 Ω×\documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$\varOmega \times $$\end{document} cm, and a 2,000 nm thermally fabricated silicon oxide layer on top. The available layers in the technology as shown in Fig. 1.1.] http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png

Design and Modeling of Inductors, Capacitors and Coplanar Waveguides at Tens of GHz FrequenciesRF MEMS Process of Fraunhofer ISiT

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Publisher
Springer International Publishing
Copyright
© The Author(s) 2015
ISBN
978-3-319-10186-6
Pages
1 –5
DOI
10.1007/978-3-319-10187-3_1
Publisher site
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Abstract

[In technologies used for high frequencies, high resistivity silicon is usually employed as the substrate material. Its high resistivity reduces the microwave losses. In order to prevent DC-currents and bias-dependent leakage from flowing into the substrate, the silicon surface is typically covered with 500 to 2,000 nm thick layer of oxide. The substrate in the ISiT technology is composed of a 508 μ\documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$\upmu $$\end{document}m thick high-resistivity silicon layer with a resistivity larger than 3,000 Ω×\documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$\varOmega \times $$\end{document} cm, and a 2,000 nm thermally fabricated silicon oxide layer on top. The available layers in the technology as shown in Fig. 1.1.]

Published: Aug 29, 2014

Keywords: Silicon Surface; Shunt Resistance; Coplanar Waveguide; Inversion Channel; Microwave Loss

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