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Designing TSVs for 3D Integrated CircuitsBackground

Designing TSVs for 3D Integrated Circuits: Background [Through-silicon vias (TSVs) connect multiple dies within a 3-D IC. TSVs can be used to route inter-die signals, deliver power to each die, and extract heat from dies further away from the heat sink [59, 63, 102]. A TSV, shown in Fig. 2.1, is a metal interconnect that passes through the Si-substrate and is electrically isolated from the substrate by a liner formed using an insulating material such as Silicon Dioxide (SiO2). The liner determines the capacitance of a TSV and is designed to exhibit low leakage current and large breakdown voltage. A barrier layer prevents diffusion of metal from the TSV into the Si substrate. Tantalum (Ta) and Titanium Nitride (TiN) are the most commonly used barrier materials. Cu-based TSVs are preferred due to the lower resistivity of Cu, but Tungsten (W) and Polysilicon TSVs have also been proposed [5].] http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png

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Publisher
Springer New York
Copyright
© The Authors 2013
ISBN
978-1-4614-5507-3
Pages
7 –14
DOI
10.1007/978-1-4614-5508-0_2
Publisher site
See Chapter on Publisher Site

Abstract

[Through-silicon vias (TSVs) connect multiple dies within a 3-D IC. TSVs can be used to route inter-die signals, deliver power to each die, and extract heat from dies further away from the heat sink [59, 63, 102]. A TSV, shown in Fig. 2.1, is a metal interconnect that passes through the Si-substrate and is electrically isolated from the substrate by a liner formed using an insulating material such as Silicon Dioxide (SiO2). The liner determines the capacitance of a TSV and is designed to exhibit low leakage current and large breakdown voltage. A barrier layer prevents diffusion of metal from the TSV into the Si substrate. Tantalum (Ta) and Titanium Nitride (TiN) are the most commonly used barrier materials. Cu-based TSVs are preferred due to the lower resistivity of Cu, but Tungsten (W) and Polysilicon TSVs have also been proposed [5].]

Published: Aug 27, 2012

Keywords: Metal Layer; Titanium Nitride; Substrate Noise; Dielectric Liner; Vertical Connection

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