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/lp/springer-journals/electrodeposited-thin-film-znte-semiconductors-for-photovoltaic-tpnxZ8DYLL
- Publisher
- Springer Journals
- Copyright
- Copyright © 1997 by Kluwer Academic Publishers
- Subject
- Engineering; Automotive Engineering; Characterization and Evaluation of Materials; Classical Mechanics; Metallic Materials
- ISSN
- 0929-1881
- eISSN
- 1572-8765
- DOI
- 10.1023/A:1008632602023
- Publisher site
- See Article on Publisher Site
Abstract
The electrodeposition of zinc telluride thin films on tin conductive oxide substrates in aqueous solution containing TeO2 and ZnCl2 was studied. The electrodeposition mechanism was investigated by cyclic-photovoltammetry. The appropriate potential region where formation of stoichiometric ZnTe semiconductor occurs, was found to be close to -0.75 V vs. SCE. Annealing of the as-deposited films was carried out at 400°C to obtain a crystalline phase. The crystallographic structure and film morphology were studied by XRD and SEM analyses, respectively. ZnTe films have the hexagonal structure of wurtzite and they are characterized by good homogeneity. A direct energy gap of 2.25 eV was determined by NIR-VIS-UV spectroscopy, in close agreement with the energy gap of ZnTe single crystals. A fractal dimension of 2.4 was determined by AFM analysis of ZnTe films. The mechanism of the thin film growth has been interpreted in terms of diffusion limited aggregation model.
Journal
Advanced Performance Materials – Springer Journals
Published: Sep 28, 2004