Get 20M+ Full-Text Papers For Less Than $1.50/day. Start a 14-Day Trial for You or Your Team.

Learn More →

Field-free switching of perpendicular magnetization through spin–orbit torque in antiferromagnet/ferromagnet/oxide structures

Field-free switching of perpendicular magnetization through spin–orbit torque in... Spin–orbit torques arising from the spin–orbit coupling of non-magnetic heavy metals allow electrical switching of perpendicular magnetization. However, the switching is not purely electrical in laterally homogeneous structures. An extra in-plane magnetic field is indeed required to achieve deterministic switching, and this is detrimental for device applications. On the other hand, if antiferromagnets can generate spin–orbit torques, they may enable all-electrical deterministic switching because the desired magnetic field may be replaced by their exchange bias. Here we report sizeable spin–orbit torques in IrMn/CoFeB/MgO structures. The antiferromagnetic IrMn layer also supplies an in-plane exchange bias field, which enables all-electrical deterministic switching of perpendicular magnetization without any assistance from an external magnetic field. Together with sizeable spin–orbit torques, these features make antiferromagnets a promising candidate for future spintronic devices. We also show that the signs of the spin–orbit torques in various IrMn-based structures cannot be explained by existing theories and thus significant theoretical progress is required. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Nature Nanotechnology Springer Journals

Field-free switching of perpendicular magnetization through spin–orbit torque in antiferromagnet/ferromagnet/oxide structures

Loading next page...
 
/lp/springer-journals/field-free-switching-of-perpendicular-magnetization-through-spin-orbit-eSHr1G172M

References (32)

Publisher
Springer Journals
Copyright
Copyright © 2016 by Nature Publishing Group
Subject
Materials Science; Materials Science, general; Nanotechnology; Nanotechnology and Microengineering
ISSN
1748-3387
eISSN
1748-3395
DOI
10.1038/nnano.2016.109
Publisher site
See Article on Publisher Site

Abstract

Spin–orbit torques arising from the spin–orbit coupling of non-magnetic heavy metals allow electrical switching of perpendicular magnetization. However, the switching is not purely electrical in laterally homogeneous structures. An extra in-plane magnetic field is indeed required to achieve deterministic switching, and this is detrimental for device applications. On the other hand, if antiferromagnets can generate spin–orbit torques, they may enable all-electrical deterministic switching because the desired magnetic field may be replaced by their exchange bias. Here we report sizeable spin–orbit torques in IrMn/CoFeB/MgO structures. The antiferromagnetic IrMn layer also supplies an in-plane exchange bias field, which enables all-electrical deterministic switching of perpendicular magnetization without any assistance from an external magnetic field. Together with sizeable spin–orbit torques, these features make antiferromagnets a promising candidate for future spintronic devices. We also show that the signs of the spin–orbit torques in various IrMn-based structures cannot be explained by existing theories and thus significant theoretical progress is required.

Journal

Nature NanotechnologySpringer Journals

Published: Jul 11, 2016

There are no references for this article.