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Memristor-Based Nanoelectronic Computing Circuits and ArchitecturesDynamic Response of Multiple Interconnected Memristors

Memristor-Based Nanoelectronic Computing Circuits and Architectures: Dynamic Response of Multiple... [This chapter focuses on the architectural perspectives that arise in circuits with multiple interconnected memristors, which demonstrate threshold-dependent switching behavior. We investigate the dynamic switching response and analyze the characteristics of both regular and irregular serial/parallel memristive circuit compositions; i.e. memristive combinations which are structured using either repetitive or non-repetitive interconnection patterns. We show how composite memristive systems can be efficiently built out of individual memristors, presenting different electrical characteristics from their structural elements. Following the proposed generalized synthesis concept, by appropriately selecting and interconnecting the constitutive circuit components, we construct composite memristive systems which exhibit behavior of programmable multi-state conducting elements. We provide several examples of such memristive implementations, combining different polarities and different initial states and/or switching characteristics, thus causing highly nontrivial, composite responses to the applied voltages. Finally, we present a novel approach for the construction of robust fine-resolution pro-grammable memristive switches.] http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png

Memristor-Based Nanoelectronic Computing Circuits and ArchitecturesDynamic Response of Multiple Interconnected Memristors

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/lp/springer-journals/memristor-based-nanoelectronic-computing-circuits-and-architectures-01QG7OdwME
Publisher
Springer International Publishing
Copyright
© Springer International Publishing Switzerland 2016
ISBN
978-3-319-22646-0
Pages
29 –59
DOI
10.1007/978-3-319-22647-7_3
Publisher site
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Abstract

[This chapter focuses on the architectural perspectives that arise in circuits with multiple interconnected memristors, which demonstrate threshold-dependent switching behavior. We investigate the dynamic switching response and analyze the characteristics of both regular and irregular serial/parallel memristive circuit compositions; i.e. memristive combinations which are structured using either repetitive or non-repetitive interconnection patterns. We show how composite memristive systems can be efficiently built out of individual memristors, presenting different electrical characteristics from their structural elements. Following the proposed generalized synthesis concept, by appropriately selecting and interconnecting the constitutive circuit components, we construct composite memristive systems which exhibit behavior of programmable multi-state conducting elements. We provide several examples of such memristive implementations, combining different polarities and different initial states and/or switching characteristics, thus causing highly nontrivial, composite responses to the applied voltages. Finally, we present a novel approach for the construction of robust fine-resolution pro-grammable memristive switches.]

Published: Aug 27, 2015

Keywords: Applied Voltage; Voltage Threshold; High Resistive State; Voltage Sweep; Switching Threshold

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