Get 20M+ Full-Text Papers For Less Than $1.50/day. Subscribe now for You or Your Team.

Learn More →

Room-temperature high spin–orbit torque due to quantum confinement in sputtered Bi x Se(1–x) films

Room-temperature high spin–orbit torque due to quantum confinement in sputtered Bi x Se(1–x) films The spin–orbit torque (SOT) that arises from materials with large spin–orbit coupling promises a path for ultralow power and fast magnetic-based storage and computational devices. We investigated the SOT from magnetron-sputtered Bi x Se(1–x) thin films in Bi x Se(1–x)/Co20Fe60B20 heterostructures by using d.c. planar Hall and spin-torque ferromagnetic resonance (ST-FMR) methods. Remarkably, the spin torque efficiency (θ S) was determined to be as large as 18.62 ± 0.13 and 8.67 ± 1.08 using the d.c. planar Hall and ST-FMR methods, respectively. Moreover, switching of the perpendicular CoFeB multilayers using the SOT from the Bi x Se(1–x) was observed at room temperature with a low critical magnetization switching current density of 4.3 × 105 A cm–2. Quantum transport simulations using a realistic sp 3 tight-binding model suggests that the high SOT in sputtered Bi x Se(1–x) is due to the quantum confinement effect with a charge-to-spin conversion efficiency that enhances with reduced size and dimensionality. The demonstrated θ S, ease of growth of the films on a silicon substrate and successful growth and switching of perpendicular CoFeB multilayers on Bi x Se(1–x) films provide an avenue for the use of Bi x Se(1–x) as a spin density generator in SOT-based memory and logic devices. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Nature Materials Springer Journals

Loading next page...
 
/lp/springer-journals/room-temperature-high-spin-orbit-torque-due-to-quantum-confinement-in-dO4OR6nYW1

References (51)

Publisher
Springer Journals
Copyright
Copyright © 2018 by The Author(s)
Subject
Materials Science; Materials Science, general; Optical and Electronic Materials; Biomaterials; Nanotechnology; Condensed Matter Physics
ISSN
1476-1122
eISSN
1476-4660
DOI
10.1038/s41563-018-0136-z
Publisher site
See Article on Publisher Site

Abstract

The spin–orbit torque (SOT) that arises from materials with large spin–orbit coupling promises a path for ultralow power and fast magnetic-based storage and computational devices. We investigated the SOT from magnetron-sputtered Bi x Se(1–x) thin films in Bi x Se(1–x)/Co20Fe60B20 heterostructures by using d.c. planar Hall and spin-torque ferromagnetic resonance (ST-FMR) methods. Remarkably, the spin torque efficiency (θ S) was determined to be as large as 18.62 ± 0.13 and 8.67 ± 1.08 using the d.c. planar Hall and ST-FMR methods, respectively. Moreover, switching of the perpendicular CoFeB multilayers using the SOT from the Bi x Se(1–x) was observed at room temperature with a low critical magnetization switching current density of 4.3 × 105 A cm–2. Quantum transport simulations using a realistic sp 3 tight-binding model suggests that the high SOT in sputtered Bi x Se(1–x) is due to the quantum confinement effect with a charge-to-spin conversion efficiency that enhances with reduced size and dimensionality. The demonstrated θ S, ease of growth of the films on a silicon substrate and successful growth and switching of perpendicular CoFeB multilayers on Bi x Se(1–x) films provide an avenue for the use of Bi x Se(1–x) as a spin density generator in SOT-based memory and logic devices.

Journal

Nature MaterialsSpringer Journals

Published: Jul 30, 2018

There are no references for this article.