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Adaptive Crystallite Kinetics in Homogenous Bilayer Oxide Memristor for Emulating Diverse Synaptic Plasticity

Adaptive Crystallite Kinetics in Homogenous Bilayer Oxide Memristor for Emulating Diverse... A critical routine for memristors applied to neuromorphic computing is to approximate synaptic dynamic behaviors as closely as possible. A type of homogenous bilayer memristor with a structure of W/HfOy/HfOx/Pt is designed and constructed in this paper. The memristor replicates the structure and oxygen vacancy (VO) distribution of a complete synapse and its Ca2+ distribution, respectively, after the forming process. The detailed characterizations of its atomic structure and phase transformation in and near the conductive channel demonstrate that the crystallite kinetics are adaptively coupled with the VO migration prompted by directional external bias. The extrusion (injection) of the VOs and the subsequent crystallite coalescence (separation), phase transformation, and alignment (misalignment) resemble closely the Ca2+ flux and neurotransmitter dynamics in chemical synapses. Such adaptation and similarity allow the memristor to emulate diverse synaptic plasticity. This study supplies a kinetic process of conductive channel theory for bilayer memristors. In addition, our memristor has very low energy consumption (5–7.5 fJ per switching for a 0.5 µm diameter device, compatible with a synaptic event) and is therefore suitable for large‐scale integration used in neuromorphic networks. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Advanced Functional Materials Wiley

Adaptive Crystallite Kinetics in Homogenous Bilayer Oxide Memristor for Emulating Diverse Synaptic Plasticity

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References (52)

Publisher
Wiley
Copyright
© 2018 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim
ISSN
1616-301X
eISSN
1616-3028
DOI
10.1002/adfm.201706927
Publisher site
See Article on Publisher Site

Abstract

A critical routine for memristors applied to neuromorphic computing is to approximate synaptic dynamic behaviors as closely as possible. A type of homogenous bilayer memristor with a structure of W/HfOy/HfOx/Pt is designed and constructed in this paper. The memristor replicates the structure and oxygen vacancy (VO) distribution of a complete synapse and its Ca2+ distribution, respectively, after the forming process. The detailed characterizations of its atomic structure and phase transformation in and near the conductive channel demonstrate that the crystallite kinetics are adaptively coupled with the VO migration prompted by directional external bias. The extrusion (injection) of the VOs and the subsequent crystallite coalescence (separation), phase transformation, and alignment (misalignment) resemble closely the Ca2+ flux and neurotransmitter dynamics in chemical synapses. Such adaptation and similarity allow the memristor to emulate diverse synaptic plasticity. This study supplies a kinetic process of conductive channel theory for bilayer memristors. In addition, our memristor has very low energy consumption (5–7.5 fJ per switching for a 0.5 µm diameter device, compatible with a synaptic event) and is therefore suitable for large‐scale integration used in neuromorphic networks.

Journal

Advanced Functional MaterialsWiley

Published: Jan 1, 2018

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