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Current Localization and Redistribution as the Basis of Discontinuous Current Controlled Negative Differential Resistance in NbOx

Current Localization and Redistribution as the Basis of Discontinuous Current Controlled Negative... Devices exploiting negative differential resistance (NDR) are of particular interest for analog computing applications, including oscillator‐based neural networks. These devices typically exploit the continuous S‐shaped current–voltage characteristic produced by materials with a strong temperature‐dependent electrical conductivity, but recent studies have also highlighted the existence of a second, discontinuous (snap‐back) characteristic that has the potential to provide additional functionality. The development of devices based on this characteristic is currently limited by uncertainty over the underlying physical mechanism, which remains the subject of active debate. In situ thermoreflectance imaging and a simple model are used to finally resolve this issue. Specifically, it is shown that the snap‐back response is a direct consequence of current localization and redistribution within the oxide film, and that material and device dependencies are consistent with model predictions. These results conclusively demonstrate that the snap‐back characteristic is a generic response of materials with a strong temperature‐dependent conductivity and therefore has the same physical origin as the S‐type characteristic. This is a significant outcome that resolves a long‐standing controversy and provides a solid foundation for engineering functional devices with specific NDR characteristics. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Advanced Functional Materials Wiley

Current Localization and Redistribution as the Basis of Discontinuous Current Controlled Negative Differential Resistance in NbOx

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References (46)

Publisher
Wiley
Copyright
© 2019 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim
ISSN
1616-301X
eISSN
1616-3028
DOI
10.1002/adfm.201906731
Publisher site
See Article on Publisher Site

Abstract

Devices exploiting negative differential resistance (NDR) are of particular interest for analog computing applications, including oscillator‐based neural networks. These devices typically exploit the continuous S‐shaped current–voltage characteristic produced by materials with a strong temperature‐dependent electrical conductivity, but recent studies have also highlighted the existence of a second, discontinuous (snap‐back) characteristic that has the potential to provide additional functionality. The development of devices based on this characteristic is currently limited by uncertainty over the underlying physical mechanism, which remains the subject of active debate. In situ thermoreflectance imaging and a simple model are used to finally resolve this issue. Specifically, it is shown that the snap‐back response is a direct consequence of current localization and redistribution within the oxide film, and that material and device dependencies are consistent with model predictions. These results conclusively demonstrate that the snap‐back characteristic is a generic response of materials with a strong temperature‐dependent conductivity and therefore has the same physical origin as the S‐type characteristic. This is a significant outcome that resolves a long‐standing controversy and provides a solid foundation for engineering functional devices with specific NDR characteristics.

Journal

Advanced Functional MaterialsWiley

Published: Dec 1, 2019

Keywords: ; ; ; ;

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