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Highly Crystalline C8‐BTBT Thin‐Film Transistors by Lateral Homo‐Epitaxial Growth on Printed Templates

Highly Crystalline C8‐BTBT Thin‐Film Transistors by Lateral Homo‐Epitaxial Growth on Printed... Highly crystalline thin films of organic semiconductors offer great potential for fundamental material studies as well as for realizing high‐performance, low‐cost flexible electronics. The fabrication of these films directly on inert substrates is typically done by meniscus‐guided coating techniques. The resulting layers show morphological defects that hinder charge transport and induce large device‐to‐device variability. Here, a double‐step method for organic semiconductor layers combining a solution‐processed templating layer and a lateral homo‐epitaxial growth by a thermal evaporation step is reported. The epitaxial regrowth repairs most of the morphological defects inherent to meniscus‐guided coatings. The resulting film is highly crystalline and features a mobility increased by a factor of three and a relative spread in device characteristics improved by almost half an order of magnitude. This method is easily adaptable to other coating techniques and offers a route toward the fabrication of high‐performance, large‐area electronics based on highly crystalline thin films of organic semiconductors. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Advanced Materials Wiley

Highly Crystalline C8‐BTBT Thin‐Film Transistors by Lateral Homo‐Epitaxial Growth on Printed Templates

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References (51)

Publisher
Wiley
Copyright
© 2017 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim
ISSN
0935-9648
eISSN
1521-4095
DOI
10.1002/adma.201703864
pmid
29024126
Publisher site
See Article on Publisher Site

Abstract

Highly crystalline thin films of organic semiconductors offer great potential for fundamental material studies as well as for realizing high‐performance, low‐cost flexible electronics. The fabrication of these films directly on inert substrates is typically done by meniscus‐guided coating techniques. The resulting layers show morphological defects that hinder charge transport and induce large device‐to‐device variability. Here, a double‐step method for organic semiconductor layers combining a solution‐processed templating layer and a lateral homo‐epitaxial growth by a thermal evaporation step is reported. The epitaxial regrowth repairs most of the morphological defects inherent to meniscus‐guided coatings. The resulting film is highly crystalline and features a mobility increased by a factor of three and a relative spread in device characteristics improved by almost half an order of magnitude. This method is easily adaptable to other coating techniques and offers a route toward the fabrication of high‐performance, large‐area electronics based on highly crystalline thin films of organic semiconductors.

Journal

Advanced MaterialsWiley

Published: Nov 1, 2017

Keywords: ; ; ; ;

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