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Large Spin Hall Conductivity in Epitaxial Thin Films of Kagome Antiferromagnet Mn3Sn at Room Temperature

Large Spin Hall Conductivity in Epitaxial Thin Films of Kagome Antiferromagnet Mn3Sn at Room... Mn3Sn is a non‐collinear antiferromagnetic quantum material that exhibits a magnetic Weyl semimetallic state and has great potential for efficient memory devices. High‐quality epitaxial c‐plane Mn3Sn thin films have been grown on a sapphire substrate using a Ru seed layer. Using spin pumping induced inverse spin Hall effect measurements on c‐plane epitaxial Mn3Sn/Ni80Fe20, spin‐diffusion length (λMn3Sn$\lambda _{\rm Mn_3Sn}$), and spin Hall conductivity (σSH) of Mn3Sn thin films are measured: λMn3Sn=0.42±0.04$\lambda _{\rm Mn_3Sn}=0.42\pm 0.04$ nm and σSH=−702ℏ/eΩ−1${\sigma}_{\mathrm{SH}}=-702\ \hslash /e\ {\Omega}^{-1}$cm−1. While λMn3Sn$\lambda _{\rm Mn_3Sn}$ is consistent with earlier studies, σSH is an order of magnitude higher and of the opposite sign. The behavior is explained on the basis of excess Mn, which shifts the Fermi level in these films, leading to the observed behavior. These findings demonstrate a technique for engineering σSH of Mn3Sn films by employing Mn composition for functional spintronic devices. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Advanced Quantum Technologies Wiley

Large Spin Hall Conductivity in Epitaxial Thin Films of Kagome Antiferromagnet Mn3Sn at Room Temperature

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Publisher
Wiley
Copyright
© 2023 Wiley‐VCH GmbH
eISSN
2511-9044
DOI
10.1002/qute.202200115
Publisher site
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Abstract

Mn3Sn is a non‐collinear antiferromagnetic quantum material that exhibits a magnetic Weyl semimetallic state and has great potential for efficient memory devices. High‐quality epitaxial c‐plane Mn3Sn thin films have been grown on a sapphire substrate using a Ru seed layer. Using spin pumping induced inverse spin Hall effect measurements on c‐plane epitaxial Mn3Sn/Ni80Fe20, spin‐diffusion length (λMn3Sn$\lambda _{\rm Mn_3Sn}$), and spin Hall conductivity (σSH) of Mn3Sn thin films are measured: λMn3Sn=0.42±0.04$\lambda _{\rm Mn_3Sn}=0.42\pm 0.04$ nm and σSH=−702ℏ/eΩ−1${\sigma}_{\mathrm{SH}}=-702\ \hslash /e\ {\Omega}^{-1}$cm−1. While λMn3Sn$\lambda _{\rm Mn_3Sn}$ is consistent with earlier studies, σSH is an order of magnitude higher and of the opposite sign. The behavior is explained on the basis of excess Mn, which shifts the Fermi level in these films, leading to the observed behavior. These findings demonstrate a technique for engineering σSH of Mn3Sn films by employing Mn composition for functional spintronic devices.

Journal

Advanced Quantum Technologies – Wiley

Published: Jan 1, 2023

Keywords: ferromagnetic resonance; inverse spin Hall effect; Mn 3 Sn; non‐collinear antiferromagnet; spin pumping; Weyl semimetals

References