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Spectroscopic Proof of the Correlation between Redox‐State and Charge‐Carrier Transport at the Interface of Resistively Switching Ti/PCMO Devices

Spectroscopic Proof of the Correlation between Redox‐State and Charge‐Carrier Transport at the... By using hard X‐ray photoelectron spectroscopy experimentally, proof is provided that resistive switching in Ti/Pr0.48Ca0.52MnO3 (PCMO) devices is based on a redox‐process that mainly occurs on the Ti‐side. The different resistance states are determined by the amount of fully oxidized Ti‐ions in the stack, implying a reversible redox‐reaction at the interface, which governs the formation and shortening of an insulating tunnel barrier. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Advanced Materials Wiley

Spectroscopic Proof of the Correlation between Redox‐State and Charge‐Carrier Transport at the Interface of Resistively Switching Ti/PCMO Devices

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References (33)

Publisher
Wiley
Copyright
Copyright © 2014 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim
ISSN
0935-9648
eISSN
1521-4095
DOI
10.1002/adma.201304054
pmid
24706476
Publisher site
See Article on Publisher Site

Abstract

By using hard X‐ray photoelectron spectroscopy experimentally, proof is provided that resistive switching in Ti/Pr0.48Ca0.52MnO3 (PCMO) devices is based on a redox‐process that mainly occurs on the Ti‐side. The different resistance states are determined by the amount of fully oxidized Ti‐ions in the stack, implying a reversible redox‐reaction at the interface, which governs the formation and shortening of an insulating tunnel barrier.

Journal

Advanced MaterialsWiley

Published: May 1, 2014

Keywords: ; ; ; ;

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