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X‐ray scattering study of GaN nanowires grown on Ti/Al2O3 by molecular beam epitaxy

X‐ray scattering study of GaN nanowires grown on Ti/Al2O3 by molecular beam epitaxy The full text for this article, hosted at journals.iucr.org, is unavailable due to technical difficulties. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Journal of Applied Crystallography Wiley

X‐ray scattering study of GaN nanowires grown on Ti/Al2O3 by molecular beam epitaxy

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Publisher
Wiley
Copyright
Copyright © 2023 Wiley Subscription Services, Inc., A Wiley Company
eISSN
1600-5767
DOI
10.1107/s1600576723001486
Publisher site
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Abstract

The full text for this article, hosted at journals.iucr.org, is unavailable due to technical difficulties.

Journal

Journal of Applied Crystallography – Wiley

Published: Apr 1, 2023

Keywords: GaN nanowires; grazing‐incidence small‐angle X‐ray scattering; GISAXS; molecular beam epitaxy; topotaxy

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